JPH0257707B2 - - Google Patents

Info

Publication number
JPH0257707B2
JPH0257707B2 JP59267712A JP26771284A JPH0257707B2 JP H0257707 B2 JPH0257707 B2 JP H0257707B2 JP 59267712 A JP59267712 A JP 59267712A JP 26771284 A JP26771284 A JP 26771284A JP H0257707 B2 JPH0257707 B2 JP H0257707B2
Authority
JP
Japan
Prior art keywords
film
contact hole
polycrystalline silicon
resistance
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59267712A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61144872A (ja
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59267712A priority Critical patent/JPS61144872A/ja
Publication of JPS61144872A publication Critical patent/JPS61144872A/ja
Publication of JPH0257707B2 publication Critical patent/JPH0257707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59267712A 1984-12-19 1984-12-19 半導体装置 Granted JPS61144872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267712A JPS61144872A (ja) 1984-12-19 1984-12-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267712A JPS61144872A (ja) 1984-12-19 1984-12-19 半導体装置

Publications (2)

Publication Number Publication Date
JPS61144872A JPS61144872A (ja) 1986-07-02
JPH0257707B2 true JPH0257707B2 (en]) 1990-12-05

Family

ID=17448500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267712A Granted JPS61144872A (ja) 1984-12-19 1984-12-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS61144872A (en])

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4884123A (en) * 1987-02-19 1989-11-28 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
JP2695812B2 (ja) * 1988-01-29 1998-01-14 株式会社東芝 半導体装置
JPH0228320A (ja) * 1988-04-06 1990-01-30 Fujitsu Ltd 半導体装置の製造方法
JPH0283978A (ja) * 1988-09-20 1990-03-26 Nec Corp 半導体装置
JP2821157B2 (ja) * 1989-01-30 1998-11-05 株式会社日立製作所 配線形成方法
JPH06275655A (ja) * 1993-03-24 1994-09-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH08139318A (ja) * 1994-11-11 1996-05-31 Fuji Electric Co Ltd 横型電界効果トランジスタ
KR0167274B1 (ko) * 1995-12-07 1998-12-15 문정환 씨모스 아날로그 반도체장치와 그 제조방법
JP2765569B2 (ja) * 1996-08-02 1998-06-18 株式会社日立製作所 半導体装置の製造方法
TW531684B (en) 1997-03-31 2003-05-11 Seiko Epson Corporatoin Display device and method for manufacturing the same
JP3362008B2 (ja) * 1999-02-23 2003-01-07 シャープ株式会社 液晶表示装置およびその製造方法

Also Published As

Publication number Publication date
JPS61144872A (ja) 1986-07-02

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees